Mfr
                    
					Infineon Technologies
					
                   
                    Technology
                    
					SiCFET (Silicon Carbide)
					
                   
                    Drain to Source Voltage (Vdss)
                    
					650 V
					
                   
                    Current - Continuous Drain (Id) @ 25°C
                    
					59A (Tc)
					
                   
                    Drive Voltage (Max Rds On, Min Rds On)
                    
					18V
					
                   
                    Rds On (Max) @ Id, Vgs
                    
					34mOhm @ 38.3A, 18V
					
                   
                    Vgs(th) (Max) @ Id
                    
					5.7V @ 11mA
					
                   
                    Gate Charge (Qg) (Max) @ Vgs
                    
					63 nC @ 18 V
					
                   
                    Input Capacitance (Ciss) (Max) @ Vds
                    
					2131 pF @ 400 V
					
                   
                    Power Dissipation (Max)
                    
					189W (Tc)
					
                   
                    Operating Temperature
                    
					-55°C ~ 150°C (TJ)
					
                   
                    Mounting Type
                    
					Through Hole
					
                   
                    Supplier Device Package
                    
					PG-TO247-4-3
					
                   
                    Base Product Number
                    
					IMZA65