Panoramica del numero di parte

NUMERO DI PARTE DEL PRODUTTORE
IRF5305SPBF
DESCRIZIONE
MOSFET P-CH 55V 31A D2PAK
DESCRIZIONE DETTAGLIATA
P-Channel 55 V 31A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
IRF5305SPBF Models
PACCHETTO STANDARD
50

Specifiche tecniche

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
IRF5305

Classificazioni ambientali e di esportazione

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Altri nomi

*IRF5305SPBF
SP001563340

Categoria

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF5305SPBF

Documenti e supporti

Datasheets
1(IRF5305S/L)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Material Chg 24/Nov/2015)
PCN Packaging
1(Barcode Label Update 24/Feb/2017)
HTML Datasheet
1(IRF5305S/L)
EDA Models
1(IRF5305SPBF Models)
Simulation Models
1(IRF5305S Saber Model)

Quantità Prezzo

-

Sostituti

Parte n. : IXTA52P10P
Produttore. : IXYS
Quantità disponibile. : 1,166
Prezzo unitario. : $6.62000
Tipo sostitutivo. : Similar