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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
AUIRFU8403
DESCRIZIONE
MOSFET N-CH 40V 100A IPAK
DESCRIZIONE DETTAGLIATA
N-Channel 40 V 100A (Tc) 99W (Tc) Through Hole I-PAK
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 76A, 10V
Vgs(th) (Max) @ Id
3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
99 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3171 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
99W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
AUIRFU8403
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
IRAUIRFU8403
SP001518276
2166-AUIRFU8403-448
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies AUIRFU8403
Documenti e supporti
Datasheets
1(AUIRF(R,U)8403)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
PCN Design/Specification
1(Mult Dev Label Chgs 8/Sep/2021)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(AUIRF(R,U)8403)
Quantità Prezzo
-
Sostituti
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