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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
2SD1801S-E
DESCRIZIONE
TRANS NPN 50V 2A TP
DESCRIZIONE DETTAGLIATA
Bipolar (BJT) Transistor NPN 50 V 2 A 150MHz 800 mW Through Hole TP
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
2SD1801S-E Models
PACCHETTO STANDARD
500
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
2 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 2V
Power - Max
800 mW
Frequency - Transition
150MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TP
Base Product Number
2SD1801
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Altri nomi
ONSONS2SD1801S-E
2SD1801S-EOS
2156-2SD1801S-E
2832-2SD1801S-E
2SD1801S-E-ND
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SD1801S-E
Documenti e supporti
Datasheets
1(2SB1201/2SD1801)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 08/Jul/2021)
EDA Models
1(2SD1801S-E Models)
Quantità Prezzo
-
Sostituti
-