English
Spain
Rusia
China
GermanyFDP2D9N12C
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
FDP2D9N12C
DESCRIZIONE
PTNG 120V N-FET TO220
DESCRIZIONE DETTAGLIATA
N-Channel 120 V 18A (Ta), 210A (Tc) 2.4W (Ta), 333W (Tc) Through Hole TO-220
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
PowerTrench®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
120 V
Current - Continuous Drain (Id) @ 25°C
18A (Ta), 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 686µA
Gate Charge (Qg) (Max) @ Vgs
109 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8894 pF @ 60 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 333W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
FDP2
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDP2D9N12C
Documenti e supporti
Datasheets
1(FDP2D9N12C)
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
()
Featured Product
1(ON Semiconductor - 30 V to 60 V Trench6 N-Channel MOSFET)
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Mar/2022)
PCN Assembly/Origin
1(Wafer Fab Change 18/Nov/2021)
Quantità Prezzo
-
Sostituti
-