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GermanyIRLU3636PBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRLU3636PBF
DESCRIZIONE
MOSFET N-CH 60V 50A IPAK
DESCRIZIONE DETTAGLIATA
N-Channel 60 V 50A (Tc) 143W (Tc) Through Hole I-PAK
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
49 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
3779 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
143W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IRLU3636
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLU3636PBF
Documenti e supporti
Datasheets
1(IRL(R,U)3636PBF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRLR3636PBF Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
PCN Other
1(Mult Dev Lot Code Standardization 11/Nov/2022)
HTML Datasheet
1(IRL(R,U)3636PBF)
Simulation Models
1(IRLR_U3636PBF Spice Model)
Quantità Prezzo
QUANTITÀ: 3000
Prezzo unitario: $1.00734
Imballaggio: Tube
Moltiplicatore minimo: 3000
Imballaggio: Tube
Moltiplicatore minimo: 3000
Sostituti
-