English
Spain
Rusia
China
GermanyFQU10N20LTU
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
FQU10N20LTU
DESCRIZIONE
MOSFET N-CH 200V 7.6A IPAK
DESCRIZIONE DETTAGLIATA
N-Channel 200 V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Through Hole I-PAK
PRODUTTORE
onsemi
INIZIATIVA STANDARD
MODELLO EDACAD
FQU10N20LTU Models
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
360mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
830 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 51W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
FQU1
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQU10N20LTU
Documenti e supporti
Datasheets
1(FQD10N20L, FQU10N20L)
Environmental Information
()
HTML Datasheet
1(FQD10N20L, FQU10N20L)
EDA Models
1(FQU10N20LTU Models)
Quantità Prezzo
-
Sostituti
-