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GermanyIRF6711STRPBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF6711STRPBF
DESCRIZIONE
MOSFET N-CH 25V 19A DIRECTFET
DESCRIZIONE DETTAGLIATA
N-Channel 25 V 19A (Ta), 84A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DIRECTFET™ SQ
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
4,800
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1810 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ SQ
Package / Case
DirectFET™ Isometric SQ
Base Product Number
IRF6711
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6711STRPBF
Documenti e supporti
Datasheets
1(IRF6711S(TR)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
()
Environmental Information
1(RoHS Certificate)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF6711S(TR)PbF)
Simulation Models
1(IRF6711STR1PBF Saber Model)
Quantità Prezzo
-
Sostituti
-