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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
H5N2522LSTL-E
DESCRIZIONE
MOSFET N-CH 250V 20A 4LDPAK
DESCRIZIONE DETTAGLIATA
N-Channel 250 V 20A (Ta) 75W (Tc) Surface Mount LDPAK
PRODUTTORE
Renesas Electronics Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
H5N2522LSTL-E Models
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LDPAK
Package / Case
SC-83
Base Product Number
H5N2522
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation H5N2522LSTL-E
Documenti e supporti
Datasheets
1(H5N2522LS)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(H5N2522LSTL-E Models)
Quantità Prezzo
-
Sostituti
-