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GermanyRN1111ACT(TPL3)
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
RN1111ACT(TPL3)
DESCRIZIONE
TRANS PREBIAS NPN 50V 0.08A CST3
DESCRIZIONE DETTAGLIATA
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 80 mA 100 mW Surface Mount CST3
PRODUTTORE
Toshiba Semiconductor and Storage
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
10,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
80 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
100 mW
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
CST3
Base Product Number
RN1111
Classificazioni ambientali e di esportazione
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
RN1111ACT(TPL3)CT
RN1111ACT(TPL3)DKR
RN1111ACT(TPL3)TR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1111ACT(TPL3)
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Quantità Prezzo
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Sostituti
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