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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
2SK2221-E
DESCRIZIONE
MOSFET N-CH 200V 8A TO3P
DESCRIZIONE DETTAGLIATA
N-Channel 200 V 8A (Ta) 100W (Tc) Through Hole TO-3P
PRODUTTORE
Renesas Electronics Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
2SK2221-E Models
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
Renesas Electronics Corporation
Series
-
Package
Tray
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
100W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-220-3 Full Pack
Base Product Number
2SK2221
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation 2SK2221-E
Documenti e supporti
Datasheets
1(2SK2220/21)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
EDA Models
1(2SK2221-E Models)
Quantità Prezzo
-
Sostituti
-