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GermanySIB900EDK-T1-GE3
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
SIB900EDK-T1-GE3
DESCRIZIONE
MOSFET 2N-CH 20V 1.5A SC75-6L
DESCRIZIONE DETTAGLIATA
Mosfet Array 20V 1.5A 3.1W Surface Mount PowerPAK® SC-75-6L Dual
PRODUTTORE
Vishay Siliconix
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
3,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
1.5A
Rds On (Max) @ Id, Vgs
225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
3.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-75-6L Dual
Supplier Device Package
PowerPAK® SC-75-6L Dual
Base Product Number
SIB900
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
SIB900EDK-T1-GE3CT
SIB900EDKT1GE3
SIB900EDK-T1-GE3DKR
SIB900EDK-T1-GE3TR
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SIB900EDK-T1-GE3
Documenti e supporti
HTML Datasheet
1(SIB900EDK)
Quantità Prezzo
-
Sostituti
-