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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
RN1105MFV,L3F
DESCRIZIONE
TRANS PREBIAS NPN 50V 0.1A VESM
DESCRIZIONE DETTAGLIATA
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
PRODUTTORE
Toshiba Semiconductor and Storage
INIZIATIVA STANDARD
MODELLO EDACAD
RN1105MFV,L3F Models
PACCHETTO STANDARD
8,000
STOCK FORNITORI
Specifiche tecniche
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
2.2 kOhms
Resistor - Emitter Base (R2)
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
500nA
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN1105
Classificazioni ambientali e di esportazione
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Altri nomi
RN1105MFV(TL3T)TR
RN1105MFV,L3FCT
RN1105MFVTL3T
RN1105MFV(TL3T)DKR-ND
RN1105MFV(TL3T)CT-ND
RN1105MFV,L3F(B
RN1105MFV,L3FTR
RN1105MFV(TL3T)DKR
RN1105MFV(TL3T)TR-ND
RN1105MFV(TL3T)CT
RN1105MFV,L3F(T
RN1105MFV,L3FDKR
RN1105MFV(TL3,T)
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1105MFV,L3F
Documenti e supporti
Datasheets
1(RN1101-6MFV)
PCN Packaging
1(Marking Chg 08/Feb/2016)
HTML Datasheet
1(RN1101-6MFV)
EDA Models
1(RN1105MFV,L3F Models)
Quantità Prezzo
-
Sostituti
Parte n. : NSVDTC123JM3T5G
Produttore. : onsemi
Quantità disponibile. : 8,000
Prezzo unitario. : $0.36000
Tipo sostitutivo. : Similar
Quantità disponibile. : 8,000
Prezzo unitario. : $0.36000
Tipo sostitutivo. : Similar