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Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
APT45GR65BSCD10
DESCRIZIONE
INSULATED GATE BIPOLAR TRANSISTO
DESCRIZIONE DETTAGLIATA
IGBT NPT 650 V 118 A 543 W Through Hole TO-247
PRODUTTORE
Microsemi Corporation
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
1
STOCK FORNITORI
Specifiche tecniche
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
118 A
Current - Collector Pulsed (Icm)
224 A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 45A
Power - Max
543 W
Input Type
Standard
Gate Charge
203 nC
Td (on/off) @ 25°C
15ns/100ns
Test Condition
433V, 45A, 4.3Ohm, 15V
Reverse Recovery Time (trr)
80 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Base Product Number
APT45GR65
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
APT45GR65BSCD10-ND
150-APT45GR65BSCD10
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microsemi Corporation APT45GR65BSCD10
Documenti e supporti
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 16/Oct/2017)
Quantità Prezzo
-
Sostituti
-