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GermanyIRF7421D1
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRF7421D1
DESCRIZIONE
MOSFET N-CH 30V 5.8A 8SO
DESCRIZIONE DETTAGLIATA
N-Channel 30 V 5.8A (Ta) 2W (Ta) Surface Mount 8-SO
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
IRF7421D1 Models
PACCHETTO STANDARD
95
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
FETKY™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
35mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
510 pF @ 25 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
2W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Classificazioni ambientali e di esportazione
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7421D1
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Datasheets
1(IRF7421D1)
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