English
Spain
Rusia
China
GermanyIRL3402PBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRL3402PBF
DESCRIZIONE
MOSFET N-CH 20V 85A TO220AB
DESCRIZIONE DETTAGLIATA
N-Channel 20 V 85A (Tc) 110W (Tc) Through Hole TO-220AB
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
50
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 7V
Rds On (Max) @ Id, Vgs
8mOhm @ 51A, 7V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Classificazioni ambientali e di esportazione
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
SP001558674
*IRL3402PBF
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL3402PBF
Documenti e supporti
Datasheets
1(IRL3402)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRL3402 Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL3402)
Quantità Prezzo
-
Sostituti
-