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GermanyIRFL4315PBF
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IRFL4315PBF
DESCRIZIONE
MOSFET N-CH 150V 2.6A SOT223
DESCRIZIONE DETTAGLIATA
N-Channel 150 V 2.6A (Ta) 2.8W (Ta) Surface Mount SOT-223
PRODUTTORE
Infineon Technologies
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
80
STOCK FORNITORI
Specifiche tecniche
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
185mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFL4315PBF
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Datasheets
1(IRFL4315)
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1(IR Part Numbering System)
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1(High Voltage Integrated Circuits (HVIC Gate Drivers))
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