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GermanyIXFN23N100
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
IXFN23N100
DESCRIZIONE
MOSFET N-CH 1000V 23A SOT-227B
DESCRIZIONE DETTAGLIATA
N-Channel 1000 V 23A (Tc) 600W (Tc) Chassis Mount SOT-227B
PRODUTTORE
IXYS
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
IXYS
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5V @ 8mA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
600W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SOT-227B
Package / Case
SOT-227-4, miniBLOC
Base Product Number
IXFN23
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFN23N100
Documenti e supporti
Datasheets
1(IXFN(24,23)N100)
Environmental Information
1(Ixys IC REACH)
PCN Obsolescence/ EOL
1(Mult DEV EOL/OBS 08/Nov/2023)
HTML Datasheet
1(IXFN(24,23)N100)
Quantità Prezzo
-
Sostituti
-