English
Spain
Rusia
China
GermanyAPTMC120TAM12CTPAG
Panoramica del numero di parte
NUMERO DI PARTE DEL PRODUTTORE
APTMC120TAM12CTPAG
DESCRIZIONE
SIC 6N-CH 1200V 220A SP6-P
DESCRIZIONE DETTAGLIATA
Mosfet Array 1200V (1.2kV) 220A (Tc) 925W Chassis Mount SP6-P
PRODUTTORE
Microchip Technology
INIZIATIVA STANDARD
MODELLO EDACAD
PACCHETTO STANDARD
STOCK FORNITORI
Specifiche tecniche
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
220A (Tc)
Rds On (Max) @ Id, Vgs
12mOhm @ 150A, 20V
Vgs(th) (Max) @ Id
2.4V @ 30mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
8400pF @ 1000V
Power - Max
925W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP6
Supplier Device Package
SP6-P
Base Product Number
APTMC120
Classificazioni ambientali e di esportazione
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Altri nomi
-
Categoria
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology APTMC120TAM12CTPAG
Documenti e supporti
Datasheets
1(APTMC120TAM12CTPAG)
Environmental Information
()
PCN Assembly/Origin
1(Assembly Site 16/Jan/2023)
HTML Datasheet
1(APTMC120TAM12CTPAG)
Quantità Prezzo
-
Sostituti
-