Resumen del número de pieza

Número de pieza del fabricante
IRFR18N15DPBF
Explicación
MOSFET N-CH 150V 18A DPAK
Descripción detallada
N-Channel 150 V 18A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
75
Inventario de proveedores

Atributos del producto

Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
125mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63

Clasificaciones medioambientales y de exportación

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Otros nombres

*IRFR18N15DPBF
SP001571416

Categoría

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFR18N15DPBF

Documentos y medios de comunicación

Datasheets
1(IRFR18N15DPbF, IRFU18N15DPbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Design Resources
1(IRFR18N15D Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRFR18N15DPbF, IRFU18N15DPbF)
Simulation Models
1(IRFR18N15D Spice Model)

Cantidad y precio

-

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