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GermanyMSCSM120TAM31CT3AG
Resumen del número de pieza
Número de pieza del fabricante
MSCSM120TAM31CT3AG
Explicación
SIC 6N-CH 1200V 89A SP3F
Descripción detallada
Mosfet Array 1200V (1.2kV) 89A (Tc) 395W (Tc) Chassis Mount SP3F
Fabricación
Microchip Technology
Plazo de entrega estándar
37 Weeks
Modelo edacad
MSCSM120TAM31CT3AG Models
Embalaje estándar
1
Inventario de proveedores
Atributos del producto
Mfr
Microchip Technology
Series
-
Package
Tube
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
89A (Tc)
Rds On (Max) @ Id, Vgs
31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
3020pF @ 1000V
Power - Max
395W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
SP3F
Base Product Number
MSCSM120
Clasificaciones medioambientales y de exportación
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
-
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology MSCSM120TAM31CT3AG
Documentos y medios de comunicación
Datasheets
1(MSCSM120TAM31CT3AG)
Environmental Information
()
Featured Product
1(Microchip Technology - Silicon Carbide Semiconductor Discrete Products)
PCN Assembly/Origin
1(Assembly Site 04/Aug/2023)
EDA Models
1(MSCSM120TAM31CT3AG Models)
Cantidad y precio
Cantidad: 1
Precio unitario: $383.59
Embalaje: Tube
Multiplicador mínimo: 1
Embalaje: Tube
Multiplicador mínimo: 1
Alternativas
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