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GermanyIRL3102PBF
Resumen del número de pieza
Número de pieza del fabricante
IRL3102PBF
Explicación
MOSFET N-CH 20V 61A TO220AB
Descripción detallada
N-Channel 20 V 61A (Tc) 89W (Tc) Through Hole TO-220AB
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
50
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
61A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 7V
Rds On (Max) @ Id, Vgs
13mOhm @ 37A, 7V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
2500 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
89W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
*IRL3102PBF
SP001576478
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL3102PBF
Documentos y medios de comunicación
Datasheets
1(IRL3102PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRL3102 Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL3102PbF)
Cantidad y precio
-
Alternativas
-