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Resumen del número de pieza
Número de pieza del fabricante
SPD30N03S2L20GBTMA1
Explicación
MOSFET N-CH 30V 30A TO252-3
Descripción detallada
N-Channel 30 V 30A (Tc) 60W (Tc) Surface Mount PG-TO252-3
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
2,500
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
SPD30N
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
INFINFSPD30N03S2L20GBTMA1
SPD30N03S2L-20 GDKR-ND
SPD30N03S2L-20 G-ND
SPD30N03S2L20GBTMA1CT
2156-SPD30N03S2L20GBTMA1-ITTR
SPD30N03S2L-20 G
SPD30N03S2L-20 GDKR
SPD30N03S2L-20 GTR-ND
SPD30N03S2L-20 GCT-ND
SPD30N03S2L20GBTMA1DKR
SP000443768
SPD30N03S2L20GBTMA1TR
SPD30N03S2L20G
SPD30N03S2L-20 GCT
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPD30N03S2L20GBTMA1
Documentos y medios de comunicación
Datasheets
1(SPD30N03S2L-20 G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPD30N03S2L-20 G)
Cantidad y precio
-
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