English
China
Rusia
Italy
GermanyFS03MR12A6MA1LB
Resumen del número de pieza
Número de pieza del fabricante
FS03MR12A6MA1LB
Explicación
SIC 6N-CH 1200V AG-HYBRIDD
Descripción detallada
Mosfet Array 1200V (1.2kV) 400A Chassis Mount AG-HYBRIDD-2
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
FS03MR12A6MA1LB Models
Embalaje estándar
6
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HybridPACK™
Package
Tray
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
400A
Rds On (Max) @ Id, Vgs
3.7mOhm @ 400A, 15V
Vgs(th) (Max) @ Id
5.55V @ 240mA
Gate Charge (Qg) (Max) @ Vgs
1320nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds
42600pF @ 600V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-HYBRIDD-2
Base Product Number
FS03MR12
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
448-FS03MR12A6MA1LB
SP002725554
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies FS03MR12A6MA1LB
Documentos y medios de comunicación
Datasheets
1(FS03MR12A6MA1LB)
Environmental Information
1(RoHS Certificate)
EDA Models
1(FS03MR12A6MA1LB Models)
Cantidad y precio
-
Alternativas
-