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GermanyNTGS1135PT1G
Resumen del número de pieza
Número de pieza del fabricante
NTGS1135PT1G
Explicación
MOSFET P-CH 8V 4.6A 6TSOP
Descripción detallada
P-Channel 8 V 4.6A (Ta) 970mW (Ta) Surface Mount 6-TSOP
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
NTGS1135PT1G Models
Embalaje estándar
3,000
Inventario de proveedores
Atributos del producto
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
Rds On (Max) @ Id, Vgs
31mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 4.5 V
Vgs (Max)
±6V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
970mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
NTGS11
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Otros nombres
2156-NTGS1135PT1G-ONTR
ONSONSNTGS1135PT1G
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTGS1135PT1G
Documentos y medios de comunicación
Datasheets
1(NTGS1135P)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 21/Jan/2010)
HTML Datasheet
1(NTGS1135P)
EDA Models
1(NTGS1135PT1G Models)
Cantidad y precio
-
Alternativas
-