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Resumen del número de pieza
Número de pieza del fabricante
NGTB50N65FL2WAG
Explicación
IGBT FIELD STOP 650V 160A TO247
Descripción detallada
IGBT Field Stop 650 V 160 A 417 W Through Hole TO-247-4L
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
30
Inventario de proveedores
Atributos del producto
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
Field Stop
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
160 A
Current - Collector Pulsed (Icm)
160 A
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 50A
Power - Max
417 W
Switching Energy
420µJ (on), 550µJ (off)
Input Type
Standard
Gate Charge
215 nC
Td (on/off) @ 25°C
23ns/123ns
Test Condition
400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)
94 ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-4
Supplier Device Package
TO-247-4L
Base Product Number
NGTB50
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
2156-NGTB50N65FL2WAG-OS
ONSONSNGTB50N65FL2WAG
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/onsemi NGTB50N65FL2WAG
Documentos y medios de comunicación
Datasheets
1(NGTB50N65FL2WAG)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 09/Oct/2020)
PCN Assembly/Origin
1(Wafer Fab Change 22/May/2020)
HTML Datasheet
1(NGTB50N65FL2WAG)
Cantidad y precio
-
Alternativas
-