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GermanyAUIRF7343Q
Resumen del número de pieza
Número de pieza del fabricante
AUIRF7343Q
Explicación
MOSFET N/P-CH 55V 4.7A 8SOIC
Descripción detallada
Mosfet Array 55V 4.7A, 3.4A 2W Surface Mount 8-SOIC
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
AUIRF7343Q Models
Embalaje estándar
95
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
4.7A, 3.4A
Rds On (Max) @ Id, Vgs
50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
740pF @ 25V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
AUIRF7343
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
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Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies AUIRF7343Q
Documentos y medios de comunicación
Datasheets
1(AUIRF7343QTR Datasheet)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(AUIRF7343QTR Datasheet)
EDA Models
1(AUIRF7343Q Models)
Cantidad y precio
-
Alternativas
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