English
China
Rusia
Italy
GermanyIRF7799L2TRPBF
Resumen del número de pieza
Número de pieza del fabricante
IRF7799L2TRPBF
Explicación
MOSFET N-CH 250V 375A DIRECTFET
Descripción detallada
N-Channel 250 V 35A (Tc) 4.3W (Ta), 125W (Tc) Surface Mount DirectFET™ Isometric L8
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
4,000
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
38mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
165 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
6714 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
4.3W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET™ Isometric L8
Package / Case
DirectFET™ Isometric L8
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
IRF7799L2TRPBF-ND
IRF7799L2TRPBFCT
IRF7799L2TRPBFTR
SP001551508
IRF7799L2TRPBFDKR
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF7799L2TRPBF
Documentos y medios de comunicación
Datasheets
1(IRF7799L2TR(1)PBF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRF7799L2TR(1)PBF)
Cantidad y precio
-
Alternativas
-