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GermanyNTD20N03L27-001
Resumen del número de pieza
Número de pieza del fabricante
NTD20N03L27-001
Explicación
MOSFET N-CH 30V 20A IPAK
Descripción detallada
N-Channel 30 V 20A (Ta) 1.75W (Ta), 74W (Tc) Through Hole IPAK
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
75
Inventario de proveedores
Atributos del producto
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 5V
Rds On (Max) @ Id, Vgs
27mOhm @ 10A, 5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18.9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1260 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.75W (Ta), 74W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
NTD20
Clasificaciones medioambientales y de exportación
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
NTD20N03L27-001OS
2156-NTD20N03L27-001
=NTD20N03L27=001
=NTD20N03L27
ONSONSNTD20N03L27-001
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD20N03L27-001
Documentos y medios de comunicación
Datasheets
1(NTD20N03L27, NVD20N03L27)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 30/Jun/2006)
HTML Datasheet
1(NTD20N03L27, NVD20N03L27)
Cantidad y precio
-
Alternativas
-