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GermanyIRF2807ZLPBF
Resumen del número de pieza
Número de pieza del fabricante
IRF2807ZLPBF
Explicación
MOSFET N-CH 75V 75A TO262
Descripción detallada
N-Channel 75 V 75A (Tc) 170W (Tc) Through Hole TO-262
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
50
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
9.4mOhm @ 53A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
110 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3270 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
SP001553914
*IRF2807ZLPBF
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF2807ZLPBF
Documentos y medios de comunicación
Datasheets
1(IRF2807Z(S,L)PbF)
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HTML Datasheet
1(IRF2807Z(S,L)PbF)
Cantidad y precio
-
Alternativas
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