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GermanyPDTC114TS,126
Resumen del número de pieza
Número de pieza del fabricante
PDTC114TS,126
Explicación
TRANS PREBIAS NPN 50V TO92-3
Descripción detallada
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 500 mW Through Hole TO-92-3
Fabricación
NXP USA Inc.
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
2,000
Inventario de proveedores
Atributos del producto
Mfr
NXP USA Inc.
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)
1µA
Power - Max
500 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
PDTC114
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Otros nombres
934047400126
PDTC114TS AMO
PDTC114TS AMO-ND
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTC114TS,126
Documentos y medios de comunicación
Datasheets
1(PDTC114TT,215 Datasheet)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PDTC114TT,215 Datasheet)
Cantidad y precio
-
Alternativas
-