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GermanyIRLU3802PBF
Resumen del número de pieza
Número de pieza del fabricante
IRLU3802PBF
Explicación
MOSFET N-CH 12V 84A I-PAK
Descripción detallada
N-Channel 12 V 84A (Tc) 88W (Tc) Through Hole I-PAK
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
75
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 4.5V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
2490 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
88W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
*IRLU3802PBF
SP001559000
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLU3802PBF
Documentos y medios de comunicación
Datasheets
1(IRLR3802PbF, IRLU3802PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
()
Design Resources
1(IRLR3802PBF Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRLR3802PbF, IRLU3802PbF)
Cantidad y precio
-
Alternativas
-