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Resumen del número de pieza
Número de pieza del fabricante
IRL5602S
Explicación
MOSFET P-CH 20V 24A D2PAK
Descripción detallada
P-Channel 20 V 24A (Tc) 75W (Tc) Surface Mount D2PAK
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
50
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
42mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
44 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
1460 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Clasificaciones medioambientales y de exportación
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
*IRL5602S
Q803261
SP001573924
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRL5602S
Documentos y medios de comunicación
Datasheets
1(IRL5602S)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRL5602S Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL5602S)
Cantidad y precio
-
Alternativas
-