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GermanyTSM80N1R2CL C0G
Resumen del número de pieza
Número de pieza del fabricante
TSM80N1R2CL C0G
Explicación
MOSFET N-CH 800V 5.5A TO262S
Descripción detallada
N-Channel 800 V 5.5A (Tc) 110W (Tc) Through Hole TO-262S (I2PAK)
Fabricación
Taiwan Semiconductor Corporation
Plazo de entrega estándar
Modelo edacad
TSM80N1R2CL C0G Models
Embalaje estándar
50
Inventario de proveedores
Atributos del producto
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.2Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19.4 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
685 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
110W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262S (I2PAK)
Package / Case
TO-262-3 Short Leads, I2PAK
Base Product Number
TSM80
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
TSM80N1R2CL C0G-ND
TSM80N1R2CLC0G
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM80N1R2CL C0G
Documentos y medios de comunicación
Datasheets
1(TSM80N1R2CL C0G)
Environmental Information
()
PCN Obsolescence/ EOL
1(OBS 22/Jan/2024)
EDA Models
1(TSM80N1R2CL C0G Models)
Cantidad y precio
-
Alternativas
-