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Resumen del número de pieza
Número de pieza del fabricante
BSP316PL6327HTSA1
Explicación
MOSFET P-CH 100V 680MA SOT223-4
Descripción detallada
P-Channel 100 V 680mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
1,000
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.8Ohm @ 680mA, 10V
Vgs(th) (Max) @ Id
2V @ 170µA
Gate Charge (Qg) (Max) @ Vgs
6.4 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
146 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4-21
Package / Case
TO-261-4, TO-261AA
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
BSP316PL6327INDKR
BSP316PL6327HTSA1TR
BSP316PL6327HTSA1DKR
BSP316PL6327
BSP316PL6327HTSA1CT
BSP316P L6327-ND
BSP316P L6327
BSP316PL6327XT
BSP316PL6327INCT
BSP316PL6327INTR-ND
BSP316PL6327INTR
BSP316PL6327INDKR-ND
BSP316PL6327INCT-ND
SP000089222
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSP316PL6327HTSA1
Documentos y medios de comunicación
Datasheets
1(BSP316P)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSP316P)
Cantidad y precio
-
Alternativas
Modelo de producto : BSP316PH6327XTSA1
Fabricante : Infineon Technologies
Cantidad disponible : 32,784
Precio unitario : $0.92000
Tipo de reemplazo : Parametric Equivalent
Cantidad disponible : 32,784
Precio unitario : $0.92000
Tipo de reemplazo : Parametric Equivalent