Resumen del número de pieza

Número de pieza del fabricante
HGTP12N60A4D
Explicación
IGBT 600V 54A TO220-3
Descripción detallada
IGBT 600 V 54 A 167 W Through Hole TO-220-3
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
HGTP12N60A4D Models
Embalaje estándar
800
Inventario de proveedores

Atributos del producto

Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
54 A
Current - Collector Pulsed (Icm)
96 A
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 12A
Power - Max
167 W
Switching Energy
55µJ (on), 50µJ (off)
Input Type
Standard
Gate Charge
78 nC
Td (on/off) @ 25°C
17ns/96ns
Test Condition
390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)
30 ns
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Base Product Number
HGTP12N60

Clasificaciones medioambientales y de exportación

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Otros nombres

HGTP12N60A4D-NDR
HGTP12N60A4D_NL-ND
HGTP12N60A4D_NL

Categoría

/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/onsemi HGTP12N60A4D

Documentos y medios de comunicación

Datasheets
1(HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 29/Jan/2021)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mult Dev Mold Chg 28/Oct/2019)
PCN Packaging
1(Mult Devices 24/Oct/2017)
HTML Datasheet
()
EDA Models
1(HGTP12N60A4D Models)
Product Drawings
1(TO220B03 Pkg Drawing)

Cantidad y precio

-

Alternativas

Modelo de producto : IGP30N60H3XKSA1
Fabricante : Infineon Technologies
Cantidad disponible : 402
Precio unitario : $2.76000
Tipo de reemplazo : Similar
Modelo de producto : STGP30H60DF
Fabricante : STMicroelectronics
Cantidad disponible : 0
Precio unitario : $2.67000
Tipo de reemplazo : Similar