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Resumen del número de pieza
Número de pieza del fabricante
NDDL01N60Z-1G
Explicación
MOSFET N-CH 600V 800MA IPAK
Descripción detallada
N-Channel 600 V 800mA (Ta) 26W (Tc) Through Hole IPAK
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
75
Inventario de proveedores
Atributos del producto
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
4.9 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
92 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
26W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Base Product Number
NDDL0
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
2156-NDDL01N60Z-1G-ON
ONSONSNDDL01N60Z-1G
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NDDL01N60Z-1G
Documentos y medios de comunicación
Datasheets
1(NDDL01N60Z, NDTL01N60Z)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 01/Sep/2017)
PCN Assembly/Origin
1(Mult Devices 29/Aug/2017)
HTML Datasheet
1(NDDL01N60Z, NDTL01N60Z)
Cantidad y precio
-
Alternativas
-