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Resumen del número de pieza
Número de pieza del fabricante
APTMC120AM12CT3AG
Explicación
SIC 2N-CH 1200V 220A SP3
Descripción detallada
Mosfet Array 1200V (1.2kV) 220A (Tc) 925W Chassis Mount SP3
Fabricación
Microchip Technology
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
Inventario de proveedores
Atributos del producto
Mfr
Microchip Technology
Series
-
Package
Bulk
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N Channel (Phase Leg)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
220A (Tc)
Rds On (Max) @ Id, Vgs
12mOhm @ 150A, 20V
Vgs(th) (Max) @ Id
2.4V @ 30mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
483nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
8400pF @ 1000V
Power - Max
925W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP3
Supplier Device Package
SP3
Base Product Number
APTMC120
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
-
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology APTMC120AM12CT3AG
Documentos y medios de comunicación
Datasheets
1(APTMC120AM12CT3AG)
Environmental Information
()
PCN Assembly/Origin
1(Assembly Site 04/Aug/2023)
HTML Datasheet
1(APTMC120AM12CT3AG)
Cantidad y precio
-
Alternativas
-