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GermanyNTHD2102PT1G
Resumen del número de pieza
Número de pieza del fabricante
NTHD2102PT1G
Explicación
MOSFET 2P-CH 8V 3.4A CHIPFET
Descripción detallada
Mosfet Array 8V 3.4A 1.1W Surface Mount ChipFET™
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
3,000
Inventario de proveedores
Atributos del producto
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
8V
Current - Continuous Drain (Id) @ 25°C
3.4A
Rds On (Max) @ Id, Vgs
58mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
16nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds
715pF @ 6.4V
Power - Max
1.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
ChipFET™
Base Product Number
NTHD21
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
NTHD2102PT1GOSTR
NTHD2102PT1GOS
=NTHD2102PT1GOSCT-ND
NTHD2102PT1GOSCT
NTHD2102PT1GOS-ND
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi NTHD2102PT1G
Documentos y medios de comunicación
Datasheets
1(NTHD2102P)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 24/Jan/2011)
HTML Datasheet
1(NTHD2102P)
Cantidad y precio
-
Alternativas
-