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GermanyJANTXV2N3811L
Resumen del número de pieza
Número de pieza del fabricante
JANTXV2N3811L
Explicación
TRANS 2PNP 60V 0.05A
Descripción detallada
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6
Fabricación
Microsemi Corporation
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
1
Inventario de proveedores
Atributos del producto
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
2 PNP (Dual)
Current - Collector (Ic) (Max)
50mA
Voltage - Collector Emitter Breakdown (Max)
60V
Vce Saturation (Max) @ Ib, Ic
250mV @ 100µA, 1mA
Current - Collector Cutoff (Max)
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1mA, 5V
Power - Max
350mW
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/336
Mounting Type
Through Hole
Package / Case
TO-78-6 Metal Can
Supplier Device Package
TO-78-6
Base Product Number
2N3811
Clasificaciones medioambientales y de exportación
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Otros nombres
150-JANTXV2N3811L
1086-3090
1086-3090-MIL
1086-3090-ND
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays/Microsemi Corporation JANTXV2N3811L
Documentos y medios de comunicación
Datasheets
1(2N3810(L,U), 2N3811(L,U))
Environmental Information
()
PCN Obsolescence/ EOL
1(2N3811 Devices 19/Jun/2015)
HTML Datasheet
1(2N3810(L,U), 2N3811(L,U))
Cantidad y precio
-
Alternativas
-