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GermanySPI07N65C3HKSA1
Resumen del número de pieza
Número de pieza del fabricante
SPI07N65C3HKSA1
Explicación
MOSFET N-CH 650V 7.3A TO262-3
Descripción detallada
N-Channel 650 V 7.3A (Tc) 83W (Tc) Through Hole PG-TO262-3-1
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
500
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id
3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3-1
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
SPI07N
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
SP000014632
SPI07N65C3XK
SPI07N65C3IN
SPI07N65C3IN-ND
SPI07N65C3X
SPI07N65C3
SPI07N65C3-ND
SP000680982
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPI07N65C3HKSA1
Documentos y medios de comunicación
Datasheets
1(SPx07N65C3)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
Cantidad y precio
-
Alternativas
-