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Resumen del número de pieza
Número de pieza del fabricante
IRFU3707ZPBF
Explicación
MOSFET N-CH 30V 56A IPAK
Descripción detallada
N-Channel 30 V 56A (Tc) 50W (Tc) Through Hole IPAK (TO-251AA)
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
75
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
9.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK (TO-251AA)
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
SP001567690
*IRFU3707ZPBF
INFIRFIRFU3707ZPBF
2156-IRFU3707ZPBF-IT
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFU3707ZPBF
Documentos y medios de comunicación
Datasheets
1(IRFR3707ZPbF, IRFU3707ZPbF)
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HTML Datasheet
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Cantidad y precio
-
Alternativas
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