English
China
Rusia
Italy
GermanyBSP299L6327HUSA1
Resumen del número de pieza
Número de pieza del fabricante
BSP299L6327HUSA1
Explicación
MOSFET N-CH 500V 400MA SOT223-4
Descripción detallada
N-Channel 500 V 400mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
1,000
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4-21
Package / Case
TO-261-4, TO-261AA
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
BSP299L6327XT
BSP299L6327HUSA1DKR
BSP299L6327HUSA1CT
BSP299L6327
BSP299 L6327CT
BSP299 L6327
BSP299 L6327DKR-ND
2156-BSP299L6327HUSA1-ITTR
BSP299 L6327DKR
INFINFBSP299L6327HUSA1
BSP299 L6327CT-ND
BSP299L6327HUSA1TR
BSP299 L6327TR-ND
SP000089200
BSP299 L6327-ND
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSP299L6327HUSA1
Documentos y medios de comunicación
Datasheets
1(BSP299)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(BSP299)
Cantidad y precio
-
Alternativas
-