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Resumen del número de pieza
Número de pieza del fabricante
RN1109MFV,L3F
Explicación
TRANS PREBIAS NPN 50V 0.1A VESM
Descripción detallada
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Fabricación
Toshiba Semiconductor and Storage
Plazo de entrega estándar
Modelo edacad
RN1109MFV,L3F Models
Embalaje estándar
8,000
Inventario de proveedores
Atributos del producto
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
47 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
500nA
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN1109
Clasificaciones medioambientales y de exportación
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Otros nombres
RN1109MFV,L3F(B
RN1109MFVL3F
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1109MFV,L3F
Documentos y medios de comunicación
Datasheets
1(RN1107MFV-09MFV)
EDA Models
1(RN1109MFV,L3F Models)
Cantidad y precio
-
Alternativas
-