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Resumen del número de pieza
Número de pieza del fabricante
APT33GF120LRDQ2G
Explicación
IGBT 1200V 64A 357W TO264
Descripción detallada
IGBT NPT 1200 V 64 A 357 W Through Hole TO-264 [L]
Fabricación
Microchip Technology
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
25
Inventario de proveedores
Atributos del producto
Mfr
Microchip Technology
Series
-
Package
Tube
Product Status
Obsolete
IGBT Type
NPT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
64 A
Current - Collector Pulsed (Icm)
75 A
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 25A
Power - Max
357 W
Switching Energy
1.315mJ (on), 1.515mJ (off)
Input Type
Standard
Gate Charge
170 nC
Td (on/off) @ 25°C
14ns/185ns
Test Condition
800V, 25A, 4.3Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Supplier Device Package
TO-264 [L]
Base Product Number
APT33GF120
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
APT33GF120LRDQ2GMI
APT33GF120LRDQ2GMI-ND
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microchip Technology APT33GF120LRDQ2G
Documentos y medios de comunicación
Datasheets
1(APT33GF120(B2,L)RDQ2(G))
Environmental Information
()
PCN Assembly/Origin
1(APT1/2/3/4/5/6/8xx 22/Dec/2022)
HTML Datasheet
1(APT33GF120(B2,L)RDQ2(G))
Product Drawings
1(TO-264 Front)
Cantidad y precio
-
Alternativas
-