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GermanyR6008FNJTL
Resumen del número de pieza
Número de pieza del fabricante
R6008FNJTL
Explicación
MOSFET N-CH 600V 8A LPTS
Descripción detallada
N-Channel 600 V 8A (Tc) 50W (Tc) Surface Mount LPTS
Fabricación
Rohm Semiconductor
Plazo de entrega estándar
Modelo edacad
R6008FNJTL Models
Embalaje estándar
1,000
Inventario de proveedores
Atributos del producto
Mfr
Rohm Semiconductor
Series
-
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
580 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
LPTS
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
R6008
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
846-R6008FNJTLTR
R6008FNJTLDKR
R6008FNJTLTR
R6008FNJTLCT
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor R6008FNJTL
Documentos y medios de comunicación
Datasheets
()
Other Related Documents
()
Environmental Information
()
Design Resources
1(LPTS Inner Structure)
HTML Datasheet
1(LPTS TL Taping Spec)
EDA Models
1(R6008FNJTL Models)
Simulation Models
1(R6008FNJ Spice Model)
Reliability Documents
1(LPTS MOS Reliability Test)
Cantidad y precio
-
Alternativas
-