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GermanyIRFH4210DTRPBF
Resumen del número de pieza
Número de pieza del fabricante
IRFH4210DTRPBF
Explicación
MOSFET N-CH 25V 44A PQFN
Descripción detallada
N-Channel 25 V 44A (Ta) 3.5W (Ta), 125W (Tc) Surface Mount PQFN (5x6)
Fabricación
Infineon Technologies
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
4,000
Inventario de proveedores
Atributos del producto
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
44A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4812 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PQFN (5x6)
Package / Case
8-PowerTDFN
Base Product Number
IRFH4210
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Otros nombres
2156-IRFH4210DTRPBF-448
SP001575718
IRFH4210DTRPBFDKR
IRFH4210DTRPBFCT
IRFH4210DTRPBFTR
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFH4210DTRPBF
Documentos y medios de comunicación
Datasheets
1(IRFH4210DPbF)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Environmental Information
1(PQFN 5x6 RoHS Compliance)
Featured Product
()
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRFH4210DPbF)
Simulation Models
1(IRFH4210DPBF Spice Model)
Cantidad y precio
Cantidad: 1
Precio unitario: $2.48
Embalaje: Cut Tape (CT)
Multiplicador mínimo: 1
Embalaje: Cut Tape (CT)
Multiplicador mínimo: 1
Alternativas
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