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Resumen del número de pieza
Número de pieza del fabricante
SCS306APC9
Explicación
DIODE SILICON CARBIDE 650V 6A
Descripción detallada
Diode 650 V 6A Through Hole
Fabricación
Rohm Semiconductor
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
Inventario de proveedores
Atributos del producto
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
6A
Voltage - Forward (Vf) (Max) @ If
1.5 V @ 6 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
30 µA @ 650 V
Capacitance @ Vr, F
300pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Operating Temperature - Junction
175°C (Max)
Base Product Number
SCS306
Clasificaciones medioambientales y de exportación
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.10.0080
Otros nombres
-
Categoría
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/Rohm Semiconductor SCS306APC9
Documentos y medios de comunicación
Datasheets
()
Other Related Documents
()
Product Training Modules
1(Silicon Carbide (SiC) Barrier Diodes)
Environmental Information
()
Design Resources
1(TO-220ACP Inner Structure)
Featured Product
1(SiC Schottky Barrier Diodes)
HTML Datasheet
()
Simulation Models
1(SCS306AP Spice Model)
Reliability Documents
1(SBD-THD Reliability Test)
Cantidad y precio
-
Alternativas
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