English
China
Rusia
Italy
GermanyKSD1616GTA
Resumen del número de pieza
Número de pieza del fabricante
KSD1616GTA
Explicación
TRANS NPN 50V 1A TO92-3
Descripción detallada
Bipolar (BJT) Transistor NPN 50 V 1 A 160MHz 750 mW Through Hole TO-92-3
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
KSD1616GTA Models
Embalaje estándar
Inventario de proveedores
Atributos del producto
Mfr
onsemi
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 50mA, 1A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA, 2V
Power - Max
750 mW
Frequency - Transition
160MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
KSD1616
Clasificaciones medioambientales y de exportación
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Otros nombres
-
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi KSD1616GTA
Documentos y medios de comunicación
Datasheets
1(KSD1616 (A))
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2011)
PCN Design/Specification
1(Copper Lead Frame 12/Oct/2007)
HTML Datasheet
1(KSD1616 (A))
EDA Models
1(KSD1616GTA Models)
Cantidad y precio
-
Alternativas
-