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GermanyEMG2DXV5T1
Resumen del número de pieza
Número de pieza del fabricante
EMG2DXV5T1
Explicación
TRANS 2NPN PREBIAS 0.23W SOT553
Descripción detallada
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230mW Surface Mount SOT-553
Fabricación
onsemi
Plazo de entrega estándar
Modelo edacad
Embalaje estándar
4,000
Inventario de proveedores
Atributos del producto
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
230mW
Mounting Type
Surface Mount
Package / Case
SOT-553
Supplier Device Package
SOT-553
Base Product Number
EMG2DX
Clasificaciones medioambientales y de exportación
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Otros nombres
2156-EMG2DXV5T1
ONSONSEMG2DXV5T1
2156-EMG2DXV5T1-ONTR-ND
Categoría
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi EMG2DXV5T1
Documentos y medios de comunicación
Datasheets
1(EMG(2,5)DXV5T1)
Environmental Information
1(onsemi RoHS)
PCN Obsolescence/ EOL
1(Multiple Devices 30/Jun/2006)
HTML Datasheet
1(EMG(2,5)DXV5T1)
Cantidad y precio
-
Alternativas
-